배트맨 토토 사이트 Barristors with Van der Waals Heterostructure

Extremely much intention has been drawn for 배트맨 토토 사이트 for next generation electronics due to its high mobility. Poor on/off ratio ruled out 배트맨 토토 사이트 transistor from the competitions. However, the issue is solved by 배트맨 토토 사이트 barristors whose current is modulated by Schottky barrier height, formed at 배트맨 토토 사이트-semiconductor junction. While Si is used for the first barristors, 2D semiconductors have taken over the position these days. In this talk, after briefly summarized 배트맨 토토 사이트 device research, discussed will be exotic scaling laws of 배트맨 토토 사이트-WS2 barristors, originated from unique properties of 2D semiconductors. In addition, new potential of barristors will be explored.